Search result: Catalogue data in Autumn Semester 2020
| Application Area
Only necessary and eligible for the Master degree in Applied Mathematics.
One of the application areas specified must be selected for the category Application Area for the Master degree in Applied Mathematics. At least 8 credits are required in the chosen application area.
|Simulation of Semiconductor Devices
|Semiconductor Devices: Physical Bases and Simulation
|The course addresses the physical principles of modern semiconductor devices and the foundations of their modeling and numerical simulation. Necessary basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided. Computer simulations of the most important devices and of interesting physical effects supplement the lectures.
|The course aims at the understanding of the principle physics of modern semiconductor devices, of the foundations in the physical modeling of transport and its numerical simulation. During the course also basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided.
|The main topics are: transport models for semiconductor devices (quantum transport, Boltzmann equation, drift-diffusion model, hydrodynamic model), physical characterization of silicon (intrinsic properties, scattering processes), mobility of cold and hot carriers, recombination (Shockley-Read-Hall statistics, Auger recombination), impact ionization, metal-semiconductor contact, metal-insulator-semiconductor structure, and heterojunctions.
The exercises are focussed on the theory and the basic understanding of the operation of special devices, as single-electron transistor, resonant tunneling diode, pn-diode, bipolar transistor, MOSFET, and laser. Numerical simulations of such devices are performed with an advanced simulation package (Sentaurus-Synopsys). This enables to understand the physical effects by means of computer experiments.
|The script (in book style) can be downloaded from: Link
|The script (in book style) is sufficient. Further reading will be recommended in the lecture.
|Prerequisites / Notice
|Qualifications: Physics I+II, Semiconductor devices (4. semester).
|Semiconductor Devices: Transport Theory and Monte Carlo Simulation
Does not take place this semester.
The course was offered for the last time in HS19.
|The lecture combines quasi-ballistic transport theory with application to realistic devices
of current and future CMOS technology.
All aspects such as quantum mechanics, phonon scattering or Monte Carlo techniques to
solve the Boltzmann equation are introduced. In the exercises advanced devices such
as FinFETs and nanosheets are simulated.
|The aim of the course is a fundamental understanding of the derivation of the Boltzmann
equation and its solution by Monte Carlo methods. The practical aspect is to become
familiar with technology computer-aided design (TCAD) and perform simulations of
advanced CMOS devices.
|The covered topics include:
- quantum mechanics and second quantization,
- band structure calculation including the pseudopotential method
- derivation of the Boltzmann equation including scattering in the Markov limit
- stochastic Monte Carlo techniques to solve the Boltzmann equation
- TCAD environment and geometry generation
- Stationary bulk Monte Carlo simulation of velocity-field curves
- Transient Monte Carlo simulation for quasi-ballistic velocity overshoot
- Monte Carlo device simulation of FinFETs and nanosheets
|Lecture notes (in German)
|Further reading will be recommended in the lecture.
|Prerequisites / Notice
|Knowledge of quantum mechanics is not required. Basic knowledge of semiconductor
physics is useful, but not necessary.
- Page 1 of 1