Suchergebnis: Katalogdaten im Herbstsemester 2018

Materialwissenschaft Bachelor Information
5. Semester
Grundlagenfächer Teil 2
Prüfungsblock 5
NummerTitelTypECTSUmfangDozierende
327-0504-00LMaterials Characterisation Methods Information O3 KP2V + 1UL. Heyderman
KurzbeschreibungDas Ziel der Lehrveranstaltung ist es, die Studierenden zu befähigen, die einer bestimmten Fragestellung entsprechenden optimalen Materialcharakterisierungsmethoden auszuwählen. Themenbereiche sind: Thermische Analyse (TD, TG, TM, DTA, DSC), Lichtmikroskopie, Beugungsmethoden (XRD, NRD, SAD), Elektronenmikroskopie (TEM, HRTEM, STEM, HAADF-STEM, SEM, ESEM, EFEM, EDX, EELS).
LernzielDas Ziel der Lehrveranstaltung ist es, die Studierenden zu befähigen, die der Fragestellung entsprechenden optimalen Materialcharakterisierungsmethoden auszuwählen.
InhaltEinführung in die Grundlagen der Materialcharakterisierung mit folgenden Themenbereichen: Thermische Analyse (TD, TG, TM, DTA, DSC), Lichtmikroskopie, Beugungsmethoden (XRD, NRD, SAD), Elektronenmikroskopie (TEM, HRTEM, STEM, HAADF-STEM, SEM, ESEM, EFEM, EDX, EELS). Der Schwerpunkt liegt auf der Diskussion der physikalischen Grundlagen der Charakterisierungsmethoden.
SkriptEin Skript steht zur Verfügung.
LiteraturMaterials Science and technology: A comprehensive treatment.
ed. by R. W. Cahn, P. Haasen, E.J. Kramer. VCH Weinheim 1992, 1994.
Volume 2
Characterization of Materials (Volume Editor E. Lifshin).
327-0508-00LSimulationstechniken in der Materialwissenschaft Information O4 KP2V + 2UC. Ederer
KurzbeschreibungEinführung in für Materialwissenschaft relevante Simulationstechniken. Simulationsmethoden für Kontinua (Finite Differenzen, Finite Elemente), mesoskopische Methoden (zelluläre Automaten, mesoskopische Monte Carlo Methoden), mikroskopische Methoden (Molekulardynamik, Monte-Carlo Simulation, Dichtefunktionaltheorie).
LernzielErlernen von Techniken, die in der rechnergestützten Physik für Materialien benötigt werden; Erlangen eines Überblicks, welche Simulationsmethoden für spezifische Fragestellungen sinnvoll sind; Entwicklung der Fähigkeit, materialwissenschaftliche Fragestellungen komplexer Systeme mit Hilfe des Computers zu behandeln.
Inhalt- Modellierung und Simulationen in der Materialwissenschaft.
- Simulationsmethoden für Kontinua (Finite Differenzen, Grundidee der finiten Elemente).
- Mesoskopische Methoden (Zelluläre Automaten, Phasenfeld-Modelle, mesoskopische Monte Carlo Methoden).
- Mikroskopische Methoden (Molekulardynamik, Monte Carlo Simulation für Vielteilchensysteme, Grundidee der Dichtefunktionaltheorie).
Literatur- R. Lesar, Introduction to Computational Materials Science (Cambridge University Press 2013).
- D. Frenkel and B. Smit, Understanding Molecular Simulations (Academic Press 2002).
- M. P. Allen and D. J. Tildesley, Computer Simulation of Liquids (Clarendon Press, 1987).
- D. Raabe, Computational Materials Science (Wiley-VCH 1998).
327-0407-01LMaterials Physics I Information O5 KP3V + 2UP. Gambardella
KurzbeschreibungThis course introduces classical and quantum mechanical concepts for the understanding of material properties from a microscopic point of view. The lectures focus on the static and dynamic properties of crystals, the formation of chemical bonds and electronic bands in metals, and semiconductors, and on the thermal and electrical properties that emerge from this analysis.
LernzielProviding physical concepts for the understanding of material properties:

Understanding the electronic properties of solids is at the heart of modern society and technology. The aim of this course is to provide fundamental concepts that allow the student to relate the microscopic structure of matter and the quantum mechanical behavior of electrons to the macroscopic properties of materials. Beyond fundamental curiosity, such level of understanding is required in order to develop and appropriately describe new classes of materials for future technology applications. By the end of the course the student should have developed a semi-quantitative understanding of basic concepts in solid state physics and be able to appreciate the pertinence of different models to the description of specific material properties.
InhaltPART I: Structure of solid matter, real and reciprocal space

The crystal lattice, Bravais lattices, primitive cells and unit cells, Wigner-Seitz cell, primitive lattice vectors, lattice with a basis, examples of 3D and 2D lattices.

Fourier transforms and reciprocal space, reciprocal lattice vectors, Brillouin zones

Elastic and inelastic scattering of elementary particles with matter (x-rays, neutrons, electrons). Interaction of x-rays with matter. X-ray diffraction, Bragg condition, atomic scattering factors, scattering length, absorption and refraction.

PART II: Dynamics of atoms in crystals

Lattice vibrations and phonons in 1D, phonons in 1D chains with monoatomic basis, phonon in 1D chains with a diatomic basis, optical and acoustic modes, phase and group velocities, phonon dispersion and eigenvectors. Phonons in 2D and 3D.

Quantum mechanical description of lattice waves in solids, the harmonic oscillator, the concept of phonon, phonon statistics, Bose-Einstein distribution, phonon density of states, Debye and Einstein models, thermal energy, heat capacity of solids.

PART III: Electron states and energy bands in crystalline solids

Electronic properties of materials, classical concepts: electrical conductivity, Hall effect, thermoelectric effects. Drude model. Transition to quantum models and review of quantum mechanical concepts.

The formation of electronic bands: from molecules to periodic crystal structures.

The free electron gas: Fermi statistics, Fermi energy and Fermi surface, density of states in k-space and as a function of energy. Inadequacy of the free electron model.

Electrons in a periodic potential, Bloch's theorem and Bloch functions, electron Bragg scattering, nearly free electron model, physical origin of bandgaps, band filling. Energy bands of different types of solids: metals, insulators, and semiconductors. Fermi surfaces. Examples.

PART IV: Electrical and heat conduction

Dynamics of electrons in energy bands, phase and group velocity, crystal momentum, the effective mass concept, scattering phenomena.

Electrical and thermal conductivities revisited. Electron transport due to electric fields (drift) and concentration gradients (diffusion). Einstein's relations. Transport of heat by electrons, Seebeck effect and thermopower, Peltier effect, thermoelectric cooling, thermoelectric energy conversion.

PART V: Semiconductors: concepts and devices

Band structure: valence and conduction states. Intrinsic and extrinsic charge carrier density. Electrical conductivity. p-n junctions. Metal-semiconductor contacts. FET transistors. Transistors as switches and amplifiers.
Skriptin English, available for download at Link
LiteraturC. Kittel, Introduction to Solid State Physics (Wiley, 2005), also printed in German. General text that covers most arguments from the point of view of condensed matter physics.
S.O. Kasap, Principles of Electronic Materials and Devices (McGraw-Hill, 2006). General text that covers most arguments from the point of view of materials science.
L. Solymar, D. Walsh, R.R.A. Syms, Electrical Properties of Materials (Oxford Univ. Press, 2014). Modern treatment of the electronic properties of materials, with examples of applications. The thermal properties of solids are not included.
J. Livingston, Electronic Properties of Engineering Materials (Wiley, 1999). Good text for providing intuitive understanding and perspectives.
D. A. Neamen, Semiconductor Physics and Devices (McGraw-Hill, 2012). General treatment of semiconductor physics and devices, including both basic and more advanced topics.
H. Ibach, H. Lueth, Solid-State Physics (Springer, 2003), available free of charge as ebook from the ETH library, also in German. General text that covers most arguments from the point of view of condensed matter physics.
Voraussetzungen / BesonderesPhysik I and II. Kenntnis der grundlegenden quantenmechanische Konzepte. Die Vorlesung wird in Englisch angeboten. Das Skript wird in Englisch abgegeben.
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