Suchergebnis: Katalogdaten im Herbstsemester 2020

Mathematik Master Information
Anwendungsgebiet
Nur für das Master-Diplom in Angewandter Mathematik erforderlich und anrechenbar.
In der Kategorie Anwendungsgebiet für den Master in Angewandter Mathematik muss eines der zur Auswahl stehenden Anwendungsgebiete gewählt werden. Im gewählten Anwendungsgebiet müssen mindestens 8 KP erworben werden.
Simulation of Semiconductor Devices
NummerTitelTypECTSUmfangDozierende
227-0157-00LSemiconductor Devices: Physical Bases and Simulation Information W4 KP3GA. Schenk
KurzbeschreibungThe course addresses the physical principles of modern semiconductor devices and the foundations of their modeling and numerical simulation. Necessary basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided. Computer simulations of the most important devices and of interesting physical effects supplement the lectures.
LernzielThe course aims at the understanding of the principle physics of modern semiconductor devices, of the foundations in the physical modeling of transport and its numerical simulation. During the course also basic knowledge on quantum-mechanics, semiconductor physics and device physics is provided.
InhaltThe main topics are: transport models for semiconductor devices (quantum transport, Boltzmann equation, drift-diffusion model, hydrodynamic model), physical characterization of silicon (intrinsic properties, scattering processes), mobility of cold and hot carriers, recombination (Shockley-Read-Hall statistics, Auger recombination), impact ionization, metal-semiconductor contact, metal-insulator-semiconductor structure, and heterojunctions.
The exercises are focussed on the theory and the basic understanding of the operation of special devices, as single-electron transistor, resonant tunneling diode, pn-diode, bipolar transistor, MOSFET, and laser. Numerical simulations of such devices are performed with an advanced simulation package (Sentaurus-Synopsys). This enables to understand the physical effects by means of computer experiments.
SkriptThe script (in book style) can be downloaded from: Link
LiteraturThe script (in book style) is sufficient. Further reading will be recommended in the lecture.
Voraussetzungen / BesonderesQualifications: Physics I+II, Semiconductor devices (4. semester).
227-0158-00LSemiconductor Devices: Transport Theory and Monte Carlo Simulation Information
Findet dieses Semester nicht statt.
The course was offered for the last time in HS19.
W4 KP2G
KurzbeschreibungThe lecture combines quasi-ballistic transport theory with application to realistic devices
of current and future CMOS technology.
All aspects such as quantum mechanics, phonon scattering or Monte Carlo techniques to
solve the Boltzmann equation are introduced. In the exercises advanced devices such
as FinFETs and nanosheets are simulated.
LernzielThe aim of the course is a fundamental understanding of the derivation of the Boltzmann
equation and its solution by Monte Carlo methods. The practical aspect is to become
familiar with technology computer-aided design (TCAD) and perform simulations of
advanced CMOS devices.
InhaltThe covered topics include:
- quantum mechanics and second quantization,
- band structure calculation including the pseudopotential method
- phonons
- derivation of the Boltzmann equation including scattering in the Markov limit
- stochastic Monte Carlo techniques to solve the Boltzmann equation
- TCAD environment and geometry generation
- Stationary bulk Monte Carlo simulation of velocity-field curves
- Transient Monte Carlo simulation for quasi-ballistic velocity overshoot
- Monte Carlo device simulation of FinFETs and nanosheets
SkriptLecture notes (in German)
LiteraturFurther reading will be recommended in the lecture.
Voraussetzungen / BesonderesKnowledge of quantum mechanics is not required. Basic knowledge of semiconductor
physics is useful, but not necessary.
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