227-0158-00L Semiconductor Devices: Transport Theory and Monte Carlo Simulation
|Autumn Semester 2020
|yearly recurring course
|Does not take place this semester.
|Language of instruction
|The course was offered for the last time in HS19.
|The lecture combines quasi-ballistic transport theory with application to realistic devices
of current and future CMOS technology.
All aspects such as quantum mechanics, phonon scattering or Monte Carlo techniques to
solve the Boltzmann equation are introduced. In the exercises advanced devices such
as FinFETs and nanosheets are simulated.
|The aim of the course is a fundamental understanding of the derivation of the Boltzmann
equation and its solution by Monte Carlo methods. The practical aspect is to become
familiar with technology computer-aided design (TCAD) and perform simulations of
advanced CMOS devices.
|The covered topics include:
- quantum mechanics and second quantization,
- band structure calculation including the pseudopotential method
- derivation of the Boltzmann equation including scattering in the Markov limit
- stochastic Monte Carlo techniques to solve the Boltzmann equation
- TCAD environment and geometry generation
- Stationary bulk Monte Carlo simulation of velocity-field curves
- Transient Monte Carlo simulation for quasi-ballistic velocity overshoot
- Monte Carlo device simulation of FinFETs and nanosheets
|Lecture notes (in German)
|Further reading will be recommended in the lecture.
|Prerequisites / Notice
|Knowledge of quantum mechanics is not required. Basic knowledge of semiconductor
physics is useful, but not necessary.