227-0158-00L  Semiconductor Devices: Transport Theory and Monte Carlo Simulation

SemesterAutumn Semester 2020
Lecturers
Periodicityyearly recurring course
CourseDoes not take place this semester.
Language of instructionEnglish
CommentThe course was offered for the last time in HS19.


AbstractThe lecture combines quasi-ballistic transport theory with application to realistic devices
of current and future CMOS technology.
All aspects such as quantum mechanics, phonon scattering or Monte Carlo techniques to
solve the Boltzmann equation are introduced. In the exercises advanced devices such
as FinFETs and nanosheets are simulated.
ObjectiveThe aim of the course is a fundamental understanding of the derivation of the Boltzmann
equation and its solution by Monte Carlo methods. The practical aspect is to become
familiar with technology computer-aided design (TCAD) and perform simulations of
advanced CMOS devices.
ContentThe covered topics include:
- quantum mechanics and second quantization,
- band structure calculation including the pseudopotential method
- phonons
- derivation of the Boltzmann equation including scattering in the Markov limit
- stochastic Monte Carlo techniques to solve the Boltzmann equation
- TCAD environment and geometry generation
- Stationary bulk Monte Carlo simulation of velocity-field curves
- Transient Monte Carlo simulation for quasi-ballistic velocity overshoot
- Monte Carlo device simulation of FinFETs and nanosheets
Lecture notesLecture notes (in German)
LiteratureFurther reading will be recommended in the lecture.
Prerequisites / NoticeKnowledge of quantum mechanics is not required. Basic knowledge of semiconductor
physics is useful, but not necessary.