402-0596-00L Electronic Transport in Nanostructures
| Semester | Frühjahrssemester 2019 |
| Dozierende | T. M. Ihn, M. Shayegan |
| Periodizität | jährlich wiederkehrende Veranstaltung |
| Lehrsprache | Englisch |
| Kurzbeschreibung | The lecture discusses basic quantum phenomena occurring in electron transport through nanostructures: Drude theory, Landauer-Buttiker theory, conductance quantization, Aharonov-Bohm effect, weak localization/antilocalization, shot noise, integer and fractional quantum Hall effects, tunneling transport, Coulomb blockade, coherent manipulation of charge- and spin-qubits. |
| Lernziel | Students are able to understand modern experiments in the field of electronic transport in nanostructures. They can critically reflect published research in this field and explain it to an audience of physicists. Students know and understand the fundamental phenomena of electron transport in the quantum regime and their significance. They are able to apply their knowledge to practical experiments in a modern research lab. |
| Skript | The lecture is based on the book: T. Ihn, Semiconductor Nanostructures: Quantum States and Electronic Transport, ISBN 978-0-19-953442-5, Oxford University Press, 2010. |
| Voraussetzungen / Besonderes | A solid basis in quantum mechanics, electrostatics, quantum statistics and in solid state physics is required. Students of the Master in Micro- and Nanosystems should at least have attended the lecture by David Norris, Introduction to quantum mechanics for engineers. They should also have passed the exam of the lecture Semiconductor Nanostructures. |