Jérôme Faist: Catalogue data in Spring Semester 2012

Name Prof. Dr. Jérôme Faist
FieldExperimentalphysik
Address
Institut für Quantenelektronik
ETH Zürich, HPT F 5
Auguste-Piccard-Hof 1
8093 Zürich
SWITZERLAND
Telephone+41 44 633 72 80
E-mailjfaist@ethz.ch
DepartmentPhysics
RelationshipFull Professor

NumberTitleECTSHoursLecturers
402-0101-00LThe Zurich Physics Colloquium Information 0 credits1KG. Blatter, C. Anastasiou, B. Batlogg, N. Beisert, M. Carollo, M. Christandl, C. Degen, G. Dissertori, R. J. Douglas, K. Ensslin, T. Esslinger, J. Faist, M. Gaberdiel, A. Gehrmann-De Ridder, G. M. Graf, J. Home, A. Imamoglu, P. Jetzer, S. Johnson, U. Keller, K. S. Kirch, S. Lilly, L. M. Mayer, J. Mesot, M. R. Meyer, B. Moore, F. Pauss, D. Pescia, A. Refregier, R. Renner, A. Rubbia, T. C. Schulthess, U. Seljak, M. Sigrist, M. Troyer, E. H. Türeci, J. F. van der Veen, A. Vaterlaus, R. Wallny, W. Wegscheider, D. Wyler, A. Zheludev
AbstractResearch colloquium
Objective
Prerequisites / NoticeOccasionally, talks may be delivered in German.
402-0464-00LOptical Properties of Semiconductors6 credits2V + 1UJ. Faist
AbstractThe rich physics of the optical properties of semiconductors, as well as the advanced processing available on these material, enabled numerous applications in everyday devices (semiconductor lasers, LEDs) as well as the realization of new physical concepts. This lecture aims at giving an introduction to this topic.
Objective
ContentThe rich physics of the optical properties of semiconductors, as well as the advanced processing available on these material, enabled numerous applications in everyday devices (semiconductor lasers, LEDs) as well as the realization of new physical concepts. This lecture aims at giving an introduction to this topic.
Bulk semiconductors:
- Interband bulk absorption - matrix element, kp approach. Relation to band structure and material
- Semiconductor under electron-hole injection: optical gain
- Low-level excitations: impurity states, excitons
- Free carrier absorption: Drude and quantum model
Quantum wells:
- Optical properties of quantum wells: matrix elements and selection rules
- Carrier dynamics, gain.
- Intersubband absorption
- Introduction to many-body properties
- Some non-linear properties of quantum wells
Quantum structures:
- Microcavities
- Introduction to quantum wires and dots
402-0551-00LLaser Seminar0 credits1ST. Esslinger, J. Faist, J. Home, A. Imamoglu, U. Keller, F. Merkt, M. Quack, M. Sigrist, E. H. Türeci, H. J. Wörner
AbstractResearch colloquium
Objective