## Alexandros Emboras: Katalogdaten im Frühjahrssemester 2018 |

Name | Herr PD Dr. Alexandros Emboras |

Lehrgebiet | Neuromorphic Computing: from Devices to Applications |

Adresse | Institut für Integrierte Systeme ETH Zürich, ETZ J 76.1 Gloriastrasse 35 8092 Zürich SWITZERLAND |

Telefon | +41 44 632 78 65 |

emborasa@ethz.ch | |

Departement | Informationstechnologie und Elektrotechnik |

Beziehung | Privatdozent |

Nummer | Titel | ECTS | Umfang | Dozierende | |
---|---|---|---|---|---|

227-0159-00L | Semiconductor Devices: Quantum Transport at the Nanoscale | 6 KP | 2V + 2U | M. Luisier, A. Emboras | |

Kurzbeschreibung | This class offers an introduction into quantum transport theory, a rigorous approach to electron transport at the nanoscale. It covers different topics such as bandstructure, Wave Function and Non-equilibrium Green's Function formalisms, and electron interactions with their environment. Matlab exercises accompany the lectures where students learn how to develop their own transport simulator. | ||||

Lernziel | The continuous scaling of electronic devices has given rise to structures whose dimensions do not exceed a few atomic layers. At this size, electrons do not behave as particle any more, but as propagating waves and the classical representation of electron transport as the sum of drift-diffusion processes fails. The purpose of this class is to explore and understand the displacement of electrons through nanoscale device structures based on state-of-the-art quantum transport methods and to get familiar with the underlying equations by developing his own nanoelectronic device simulator. | ||||

Inhalt | The following topics will be addressed: - Introduction to quantum transport modeling - Bandstructure representation and effective mass approximation - Open vs closed boundary conditions to the Schrödinger equation - Comparison of the Wave Function and Non-equilibrium Green's Function formalisms as solution to the Schrödinger equation - Self-consistent Schödinger-Poisson simulations - Quantum transport simulations of resonant tunneling diodes and quantum well nano-transistors - Top-of-the-barrier simulation approach to nano-transistor - Electron interactions with their environment (phonon, roughness, impurity,...) - Multi-band transport models | ||||

Skript | Lecture slides are distributed every week and can be found at https://iis-students.ee.ethz.ch/lectures/quantum-transport-in-nanoscale-devices/ | ||||

Literatur | Recommended textbook: "Electronic Transport in Mesoscopic Systems", Supriyo Datta, Cambridge Studies in Semiconductor Physics and Microelectronic Engineering, 1997 | ||||

Voraussetzungen / Besonderes | Basic knowledge of semiconductor device physics and quantum mechanics | ||||

227-0303-00L | Advanced Photonics | 6 KP | 2V + 1U + 1A | A. Dorodnyy, A. Emboras, M. Burla, P. Ma, T. Watanabe | |

Kurzbeschreibung | Lecture gives comprehensive insight into nano-scale photonic devices, physical fundamentals behind, simulation techniques and an overview of the design and fabrication. Following applications of nano-scale photonic structures are discussed: waveguides, fiber couplers, light sources, modulators and detectors, photovoltaic cells, atomic-level devices, integrated microwave/optical devices. | ||||

Lernziel | General training in advanced photonic device design with an overview of simulation, fabrication, and characterization techniques. Hands-on experience with photonic and optoelectronic device modeling and simulation. | ||||

Skript | The presentation and the lecture notes will be provided every week. | ||||

Literatur | Prof. Thomas Inn: Semiconductor Nanostructures, Oxford University Press Prof. Peter Wurfel: Physics of Solar Cells, Wiley Prof. H. Gatzen, Prof. Volker Saile, Prof. Juerg Leuthold: Micro and Nano Fabrication, Springer | ||||

Voraussetzungen / Besonderes | Basic knowledge of semiconductor physics, physics of the electromagnetic filed and thermodynamics. |