Chih-Jen Shih: Katalogdaten im Frühjahrssemester 2020 |
| Name | Herr Prof. Dr. Chih-Jen Shih |
| Lehrgebiet | Technische Chemie |
| Adresse | Professur für Technische Chemie ETH Zürich, HCI F 137 Vladimir-Prelog-Weg 1-5/10 8093 Zürich SWITZERLAND |
| Telefon | +41 44 633 42 40 |
| chih-jen.shih@chem.ethz.ch | |
| Departement | Chemie und Angewandte Biowissenschaften |
| Beziehung | Ausserordentlicher Professor |
| Nummer | Titel | ECTS | Umfang | Dozierende | |
|---|---|---|---|---|---|
| 529-0610-00L | Interface Engineering of Materials Only for Chemical and Bioengineering MSc, Programme Regulations 2005. | 7 KP | 4G | C.‑J. Shih | |
| Kurzbeschreibung | Advances in interface engineering, the control of molecular and charge behaviour between two phases, are driving the development of new technologies across many industrial and scientific fields. This course will review the fundamental engineering concepts required to analyse and solve problems at liquid-solid and solid-solid interfaces. | ||||
| Lernziel | Introduce the students to the engineering principles of energy, mass, and electron transport at the liquid-solid and solid-solid interfaces, for the applications in materials processing and electronic devices. | ||||
| Inhalt | PART A: Solid-Liquid Interface Chapter 1: Interface Phenomena Chapter 2: Crystallization and Crystal Growth Chapter 3: Electrical Double Layer Chapter 4: Electroosmotic Flow PART B: Solid-Solid Interface Chapter 5: Fundamentals of Electronic Materials Chapter 6: Junction Characteristics Chapter 7: Solar Cells and Light Emitting Diodes Chapter 8: Field-Effect Transistors | ||||
| Literatur | Hiemenz P.C., Rajagopalan R., Principles of Colloid and Surface Chemistry, 3rd Edition. Deen W.M., Analysis of Transport Phenomena, 2nd Edition. Sze S.M. and Ng K.K., Physics of Semiconductor Devices, 3rd Edition. | ||||
| Voraussetzungen / Besonderes | Engineering Mathematics, Transport Phenomena, Undergraduate Physical Chemistry | ||||
| 529-0610-01L | Interface Engineering of Materials | 6 KP | 4G | C.‑J. Shih | |
| Kurzbeschreibung | Advances in interface engineering, the control of molecular and charge behaviour between two phases, are driving the development of new technologies across many industrial and scientific fields. This course will review the fundamental engineering concepts required to analyse and solve problems at liquid-solid and solid-solid interfaces. | ||||
| Lernziel | Introduce the students to the engineering principles of energy, mass, and electron transport at the liquid-solid and solid-solid interfaces, for the applications in materials processing and electronic devices. | ||||
| Inhalt | PART A: Solid-Liquid Interface Chapter 1: Interface Phenomena Chapter 2: Crystallization and Crystal Growth Chapter 3: Electrical Double Layer Chapter 4: Electroosmotic Flow PART B: Solid-Solid Interface Chapter 5: Fundamentals of Electronic Materials Chapter 6: Junction Characteristics Chapter 7: Solar Cells and Light Emitting Diodes Chapter 8: Field-Effect Transistors | ||||
| Literatur | Hiemenz P.C., Rajagopalan R., Principles of Colloid and Surface Chemistry, 3rd Edition. Deen W.M., Analysis of Transport Phenomena, 2nd Edition. Sze S.M. and Ng K.K., Physics of Semiconductor Devices, 3rd Edition. | ||||
| Voraussetzungen / Besonderes | Engineering Mathematics, Transport Phenomena, Undergraduate Physical Chemistry | ||||