Jérôme Faist: Katalogdaten im Frühjahrssemester 2012 |
| Name | Herr Prof. Dr. Jérôme Faist |
| Lehrgebiet | Experimentalphysik |
| Adresse | Institut für Quantenelektronik ETH Zürich, HPT F 5 Auguste-Piccard-Hof 1 8093 Zürich SWITZERLAND |
| Telefon | +41 44 633 72 80 |
| jfaist@ethz.ch | |
| Departement | Physik |
| Beziehung | Ordentlicher Professor |
| Nummer | Titel | ECTS | Umfang | Dozierende | |
|---|---|---|---|---|---|
| 402-0101-00L | The Zurich Physics Colloquium  | 0 KP | 1K | G. Blatter, C. Anastasiou, B. Batlogg, N. Beisert, M. Carollo, M. Christandl, C. Degen, G. Dissertori, R. J. Douglas, K. Ensslin, T. Esslinger, J. Faist, M. Gaberdiel, A. Gehrmann-De Ridder, G. M. Graf, J. Home, A. Imamoglu, P. Jetzer, S. Johnson, U. Keller, K. S. Kirch, S. Lilly, L. M. Mayer, J. Mesot, M. R. Meyer, B. Moore, F. Pauss, D. Pescia, A. Refregier, R. Renner, A. Rubbia, T. C. Schulthess, U. Seljak, M. Sigrist, M. Troyer, E. H. Türeci, J. F. van der Veen, A. Vaterlaus, R. Wallny, W. Wegscheider, D. Wyler, A. Zheludev | |
| Kurzbeschreibung | Forschungskolloquium | ||||
| Lernziel | |||||
| Voraussetzungen / Besonderes | Vorträge evtl. auch auf Deutsch | ||||
| 402-0464-00L | Optical Properties of Semiconductors | 6 KP | 2V + 1U | J. Faist | |
| Kurzbeschreibung | The rich physics of the optical properties of semiconductors, as well as the advanced processing available on these material, enabled numerous applications in everyday devices (semiconductor lasers, LEDs) as well as the realization of new physical concepts. This lecture aims at giving an introduction to this topic. | ||||
| Lernziel | |||||
| Inhalt | The rich physics of the optical properties of semiconductors, as well as the advanced processing available on these material, enabled numerous applications in everyday devices (semiconductor lasers, LEDs) as well as the realization of new physical concepts. This lecture aims at giving an introduction to this topic. Bulk semiconductors: - Interband bulk absorption - matrix element, kp approach. Relation to band structure and material - Semiconductor under electron-hole injection: optical gain - Low-level excitations: impurity states, excitons - Free carrier absorption: Drude and quantum model Quantum wells: - Optical properties of quantum wells: matrix elements and selection rules - Carrier dynamics, gain. - Intersubband absorption - Introduction to many-body properties - Some non-linear properties of quantum wells Quantum structures: - Microcavities - Introduction to quantum wires and dots | ||||
| 402-0551-00L | Laser Seminar | 0 KP | 1S | T. Esslinger, J. Faist, J. Home, A. Imamoglu, U. Keller, F. Merkt, M. Quack, M. Sigrist, E. H. Türeci, H. J. Wörner | |
| Kurzbeschreibung | Research colloquium | ||||
| Lernziel | |||||